IJEEE

IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS

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Abstract

This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current

Recommended Citation

[1] K. Saraswat, C. O. Chui, K. Donghyun, T. Krishnamohan and A. Pathe, “ High mobility materials and ovel device structures for high performance nanoscale MOSFETs,” in Proc. IEDM. 2006, pp. 659-662.

[2] S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, p. 68.

[3] M. K. Husain, X. V. Li, and C. H. de Groot, “High-quality Schottky contacts for limiting leakage currents in Ge-Based Schottky barrier MOSFETs,” IEEE Trans on Electon Devices, vol. 56, no. 3, March 2009, pp. 499-504.

[4] ATLAS User’s Manual, A 2D Device Simulator Software Package, SILVACO Int. CA, (2010).