International Journal of Electronics and Electrical Engineering IJEEE
ISSN: 2231-5284
IJEEE
IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS
CHANDRIMA MONDAL
Institute of Radio Physics and Electronics, University of Calcutta, Kolkata-700009, India,
ABHIJIT BISWAS
Dept. of Radio Physics and Electronics, University of Calcutta, Kolkata, India
Abstract
This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current
Recommended Citation
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